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| CY7C1046CV33 1M x 4 Static RAM Features * High speed -- tAA = 10ns * Low active power for 10 ns speed -- 324 mW (max.) * 2.0V data retention * Automatic power-down when deselected * TTL-compatible inputs and outputs * Easy memory expansion with CE and OE features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A19). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The four input/output pins (I/O0 through I/O3) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a Write operation (CE LOW, and WE LOW). The CY7C1046CV33 is available in a standard 400-mil-wide 32-pin SOJ package with center power and ground (revolutionary) pinout. Functional Description[1] The CY7C1046CV33 is a high-performance CMOS static RAM organized as 1,048,576 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Logic Block Diagram Pin Configuration SOJ Top View A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 INPUT BUFFER I/O0 SENSE AMPS 1M x 4 ARRAY I/O1 I/O2 I/O3 CE WE OE COLUMN DECODER POWER DOWN A0 A1 A2 A3 A4 CE I/O0 VCC GND I/O1 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE I/O3 GND VCC I/O2 A14 A13 A12 A11 A10 NC ROW DECODER Selection Guide Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current -8[2] 8 100 10 -10 10 90 10 -12 12 85 10 -15 15 80 10 Unit ns mA mA Notes: 1. For guidelines on SRAM system design, please refer to the `System Design Guidelines' Cypress application note, available on the internet at www.cypress.com. 2. Shaded areas contain advance information. Cypress Semiconductor Corporation Document #: 38-05003 Rev. *A A 11 A 12 A 13 A14 A15 A16 A17 A18 A19 * 3901 North First Street * San Jose * CA 95134 * 408-943-2600 Revised September 13, 2002 CY7C1046CV33 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature .................................-65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VCC to Relative GND[3] .... -0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State[3] ....................................-0.5V to VCC + 0.5V DC Input Voltage[3] .................................-0.5V to VCC + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA Operating Range Range Commercial Industrial Ambient Temperature 0C to +70C -40C to + 85C VCC 3.0V - 3.6V 3.0V - 3.6V DC Electrical Characteristics Over the Operating Range -8[2] Parameter VOH VOL VIH VIL IIX IOZ ICC ISB1 Description Test Conditions Output HIGH Voltage VCC = Min., IOH = -4.0 mA Output LOW Voltage VCC = Min., IOL = 8.0 mA Input HIGH Voltage Input LOW Voltage[3] Input Load Current Output Leakage Current VCC Operating Supply Current GND < VI < VCC GND < VOUT < VCC, Output Disabled VCC = Max., f = fMAX = 1/tRC 2.0 -0.3 -1 -1 2.4 0.4 VCC + 0.3 0.8 +1 +1 100 40 2.0 -0.3 -1 -1 2.4 0.4 VCC 2.0 + 0.3 0.8 +1 +1 90 40 -0.3 -1 -1 -10 2.4 0.4 VCC + 0.3 0.8 +1 +1 85 40 2.0 -0.3 -1 -1 -12 2.4 0.4 VCC + 0.3 0.8 +1 +1 80 40 -15 V V V V A A mA mA Min. Max. Min. Max. Min. Max. Min. Max. Unit ISB2 Automatic CE Max. VCC, CE > VIH Power-Down Current VIN > VIH or --TTL Inputs VIN < VIL, f = fMAX Automatic CE Max. VCC, Commercial Power-Down Current CE > VCC - 0.3V, VIN > VCC - 0.3V, --CMOS Inputs or VIN < 0.3V, f=0 10 10 10 10 mA Capacitance[4] Parameter CIN COUT Description Input Capacitance I/O Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 3.3V Max. 6 6 Unit pF pF Notes: 3. VIL (min.) = -2.0V for pulse durations of less than 20 ns. 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05003 Rev. *A Page 2 of 9 CY7C1046CV33 AC Test Loads and Waveforms[5] 8-, 10-ns devices: OUTPUT 50 * CAPACITIVE LOAD CONSISTS OF ALL COMPONENTS OF THE TEST ENVIRONMENT 1.5V 12-, 15-ns devices: Z=50 3.3V R 317 30 pF* OUTPUT 30 pF R2 351 (a) (b) High-Z characteristics: R 317 3.0V 90% GND 10% ALL INPUT PULSES 90% 10% 3.3V OUTPUT 5 pF R2 351 Rise Time: 1 V/ns (c) Fall Time: 1 V/ns (d) Notes: 5. AC characteristics (except High-Z) for all 8-ns and 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d). Document #: 38-05003 Rev. *A Page 3 of 9 CY7C1046CV33 AC Switching Characteristics[6] Over the Operating Range -8[2] -10 -12 -15 Parameter Read Cycle tpower[7] tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD Write tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE Description VCC(typical) to the first access Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to CE LOW to CE HIGH to Low-Z[9] Low-Z[9] High-Z[8, 9] Min. 1 8 Max. Min. 1 10 Max. Min. 1 12 Max. Min. 1 15 Max. Unit s ns 8 3 8 4 0 4 3 4 0 8 8 6 6 0 0 6 4 0 3 4 10 7 7 0 0 7 5 0 3 0 3 0 3 10 3 10 5 0 5 3 5 0 10 12 8 8 0 0 8 6 0 3 5 12 3 12 6 0 6 3 6 0 12 15 10 10 0 0 10 7 0 3 6 15 15 7 7 7 15 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns OE HIGH to High-Z[8, 9] CE LOW to Power-up CE HIGH to Power-Down Cycle[10, 11] Write Cycle Time CE LOW to Write End Address Set-up to Write End Address Hold from Write End Address Set-up to Write Start WE Pulse Width Data Set-up to Write End Data Hold from Write End WE HIGH to WE LOW to Low-Z[9] High-Z[8, 9] 7 ns Notes: 6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V. 7. tPOWER gives the minimum amount of time that the power supply should be at stable, typical Vcc values until the first memory access can be performed. 8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 10. The internal Write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a Write, and the transition of either of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write. 11. The minimum Write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 38-05003 Rev. *A Page 4 of 9 CY7C1046CV33 s Switching Waveforms Read Cycle No. 1[14, 15] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[15, 16] ADDRESS tRC CE tACE OE tDOE tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tHZOE tHZCE DATA VALID tPD 50% ISB ICC HIGH IMPEDANCE DATA OUT Notes: 12. tr < 3 ns for the -10, -12, and -15 speeds. 13. No input may exceed VCC + 0.5V. 14. Device is continuously selected. OE, CE = VIL. 15. WE is HIGH for Read cycle. 16. Address valid prior to or coincident with CE transition LOW. Document #: 38-05003 Rev. *A Page 5 of 9 CY7C1046CV33 Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[17, 18] tWC ADDRESS tSCE CE tSA tSCE tAW tPWE WE tSD DATA I/O DATA VALID tHD tHA Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[17, 18] tWC ADDRESS tSCE CE tAW tSA WE tPWE tHA OE tSD DATA I/O NOTE 19 tHZOE Notes: 17. Data I/O is high impedance if OE = VIH. 18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 19. During this period the I/Os are in the output state and input signals should not be applied. tHD DATAIN VALID Document #: 38-05003 Rev. *A Page 6 of 9 CY7C1046CV33 Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[18] tWC ADDRESS tSCE CE tAW tSA WE tSD DATA I/O NOTE 19 tHZWE DATA VALID tPWE tHA tHD tLZWE Truth Table CE H L L L OE X L X H WE X H L H I/O0 - I/O7 High-Z Data Out Data In High-Z Power-down Read Write Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Ordering Information Speed (ns) 10 Ordering Code CY7C1046CV33-10VC CY7C1046CV33-10VI 12 CY7C1046CV33-12VC CY7C1046CV33-12VI 15 CY7C1046CV33-15VC CY7C1046CV33-15VI Package Name V33 V33 V33 V33 V33 V33 Package Type 32-lead (400-mil) Molded SOJ 32-lead (400-mil) Molded SOJ 32-lead (400-mil) Molded SOJ 32-lead (400-mil) Molded SOJ 32-lead (400-mil) Molded SOJ 32-lead (400-mil) Molded SOJ Operating Range Commercial Industrial Commercial Industrial Commercial Industrial Document #: 38-05003 Rev. *A Page 7 of 9 CY7C1046CV33 Package Diagram 32-Lead (400-Mil) Molded SOJ V33 51-85033-*B All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05003 Rev. *A Page 8 of 9 (c) Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1046CV33 Document History Page Document Title: CY7C1046CV33 1M x 4 Static RAM Document Number: 38-05003 REV. ** *A ECN NO. 112570 116478 Issue Date 03/06/02 09/16/02 Orig. of Change HGK CEA Description of Change New data sheet for RAM 7 Add applications foot note to data sheet, page 1. Document #: 38-05003 Rev. *A Page 9 of 9 |
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